Extreme Edge Uniformity Control

ABSTRACT

A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

FIELD

Embodiments of the present disclosure relate to angle and etch ratecontrol for plasma processing chambers, and more particularly, anapparatus for controlling the ion incident angle along an edge of aworkpiece.

BACKGROUND

The increasing complexity of devices on a workpiece forces continuousimprovement in workpiece processing apparatus. For example, parametersthat were adequate for previous geometries may no longer be acceptable.The process uniformity parameters for these shrinking devices imposemore stringent constraints on controlling how species arrive to theworkpiece. For example, even a few degrees in ion angle skew may lead tounacceptable consequences on device performance.

This problem arises in cases where the plasma sheath above the workpieceis not flat. This can occur as a result of voltage mismatch between theworkpiece surface and the shield ring, a geometrical mismatch betweenthese components, or both types of mismatch. Geometry and voltage mayalso drift during tool operation. For example, the geometry of theshield ring may drift due to etching effects during tool operation andvoltage may drift due to charging effects.

As an example, in some workpiece processing apparatus, there is arelationship between the rate and angle at which a portion of theworkpiece is etched and the distance from the center of that workpiece.This may be referred to as radial uniformity. Stated differently, theshape of the plasma sheath above the workpiece may change as a functionof the distance from the center of the workpiece. This change in shapemay be most pronounced at the outer edge of the workpiece, and mayaffect the angle at which ions strike the workpiece along that outeredge.

Various techniques have been attempted to address this issue of radialuniformity. However, radial non-uniformity still exists and is becominga more significant issue as geometries continue to shrink.

Thus, it would be beneficial if there was a method and an apparatuswhich could correct or compensate for this radial non-uniformity alongthe outer edge of the workpiece. More particularly, it would bebeneficial if there were a method and apparatus for adjustable controlof the plasma sheath shape so as to adjust ion angles.

SUMMARY

A workpiece processing apparatus allowing independent control of thevoltage applied to the shield ring and the workpiece is disclosed. Theworkpiece processing apparatus includes a platen. The platen includes adielectric material on which a workpiece is disposed. A bias electrodeis disposed beneath the dielectric material. A shield ring, which isconstructed from a metal, ceramic, semiconductor or dielectric material,is arranged around the perimeter of the workpiece. In certainembodiments, a ring electrode is disposed beneath the shield ring. Thering electrode and the bias electrode may be separately powered. Thisallows the voltage generated on the surface of the shield ring to matchthat of the workpiece, which causes the plasma sheath above theworkpiece to be flat. Additionally, the voltage applied to the shieldring may be made different from that of the workpiece to compensate formismatches in geometries. This improves uniformity of incident anglesalong the outer edge of the workpiece.

According to one embodiment, a workpiece processing apparatus isdisclosed. The workpiece processing apparatus comprises a plasmagenerator; a plasma chamber; a platen, the platen comprising adielectric material on which a workpiece is disposed; a bias electrodedisposed beneath the dielectric material; a bias power supply to apply abias voltage to the bias electrode; a shield ring to surround theworkpiece; and a ring bias power supply to apply a ring bias voltage tothe shield ring; a ring height measurement system; and a controller, incommunication with the ring height measurement system, wherein thecontroller calculates the ring bias voltage to be applied to the shieldring based on input from the ring height measurement system. In certainembodiments, the workpiece processing apparatus further comprises acurrent measurement device in communication with the controller tomeasure current directed toward the workpiece, wherein the controlleruses input from the current measurement device to calculate the ringbias voltage. In certain embodiments, the controller calculates the ringbias voltage based on a difference in height between the workpiece andthe shield ring. In some embodiments, the shield ring is constructed ofmetal and the ring bias power supply is in electrical communication withthe shield ring. In certain embodiments, the shield ring comprises aplurality of arcuate electrodes, which form an annular ring, and whereinthe ring bias power supply comprises a plurality of arcuate bias powersupplies, each to apply a voltage to a respective one of the arcuateelectrodes, and wherein the controller determines the voltage to applyto each of the arcuate electrodes. In certain embodiments, the ringheight measurement system comprises a laser.

According to another embodiment, a platen is disclosed. The platencomprises a dielectric material on which a workpiece is disposed; a biaselectrode disposed beneath the dielectric material; a bias power supplyin communication with the bias electrode; a shield ring, in a shape ofan annular ring to surround the workpiece, the shield ring constructedof a non-conductive material; and a ring electrode disposed beneath theshield ring. In some embodiments, the platen comprises a ring powersupply in communication with the ring electrode, where the ringelectrode and the bias electrode are independently controller. Incertain embodiment, the ring power supply supplies a voltage to the ringelectrode so that a surface voltage of the shield ring equals a surfacevoltage of the workpiece. In some embodiments, the ring electrodecomprises a plurality of arcuate electrodes, each disposed beneath theshield ring and together forming an annular ring. In certainembodiments, the platen comprises a plurality of arcuate power supplies,each arcuate power supply in communication with a respective arcuateelectrode, where the arcuate power supplies are independentlycontrolled.

According to another embodiment, a method of processing a workpiece,wherein the workpiece is disposed on a platen and surrounded by a shieldring, is disclosed. The method comprises manipulating a voltagegenerated on a surface of the workpiece and a voltage generated on asurface of the shield ring so that a deviation in an incident angle ofions striking the workpiece is less than 0.5° across an entirety of theworkpiece. In certain embodiments, the manipulating comprisesindependently controlling voltages applied to the shield ring and theworkpiece. In some embodiments, the voltage applied to the shield ringis manipulated based on a difference in height between the shield ringand the workpiece. In certain embodiments, the difference in heightbetween the shield ring and the workpiece is determined using a laser.In other embodiments, the difference in height between the shield ringand the workpiece is determined based on hours of operation.

BRIEF DESCRIPTION OF THE FIGURES

For a better understanding of the present disclosure, reference is madeto the accompanying drawings, which are incorporated herein by referenceand in which:

FIG. 1 is a workpiece processing apparatus in accordance with oneembodiment;

FIG. 2 is an expanded cross-sectional view of the platen according toone embodiment;

FIG. 3 is an expanded cross-sectional view of the platen according toanother embodiment;

FIGS. 4A-4B shows the plasma density within the workpiece processingapparatus for two different configurations;

FIG. 5 is an expanded cross-sectional view of the platen according toanother embodiment;

FIG. 6 is a top view of the platen according to another embodiment;

FIG. 7 is an expanded cross-sectional view of the platen according toanother embodiment;

FIGS. 8A-8C show the effect of voltage differences to compensate forgeometric mismatches;

FIG. 9 shows a representative method of controlling the incident anglealong the outer edge of a workpiece; and

FIG. 10 shows a system to control the shape of the plasma sheath abovethe workpiece.

DETAILED DESCRIPTION

Workpieces may be processed using a plasma processing chamber. Theworkpiece is disposed on a platen, which may be biased, eithercontinuously or in a pulsed fashion, to attract ions from the plasmatoward the workpiece. The platen may also include a shield ring thatsurrounds the outer edge of the workpiece. The shield ring is used toprotect the side and underside of the workpiece during processing.

FIG. 1 shows a first embodiment of workpiece processing apparatus 10that may be used to control edge uniformity. The workpiece processingapparatus 10 comprises a plasma chamber 30, which is defined by aplurality of chamber walls 32.

An antenna 20 is disposed external to a plasma chamber 30, proximate adielectric window 25. The dielectric window 25 may also form part of oneor more of the walls that define the plasma chamber 30. The antenna 20is electrically connected to a RF power supply 27, which supplies analternating voltage to the antenna 20. The voltage may be at a frequencyof, for example, 2 MHz or more. While the dielectric window 25 andantenna 20 are shown on part of chamber walls 32 and a top wall of theplasma chamber 30, other embodiments are also possible. For example, theantenna 20 may also be disposed on the top of the plasma chamber 30. Thechamber walls 32 of the plasma chamber 30 may be made of a conductivematerial, such as graphite. These chamber walls 32 may be biased at anextraction voltage, such as by extraction power supply 80. Theextraction voltage may be, for example, 1 kV, although other voltagesare within the scope of the disclosure. In certain embodiments, anextraction power supply 80 may not be used and the chamber walls 32 maybe electrically connected to ground.

The workpiece processing apparatus 10 includes a platen 40 disposedwithin the plasma chamber 30. The platen 40 may be in electricalcommunication with a bias power supply 45. A workpiece 90 may bedisposed on the top surface of the platen 40. The bias power supply 45may be used to bias the platen 40 to a bias voltage which is morenegative than the voltage of the plasma. This bias voltage attractspositive ions from the plasma toward the workpiece 90. The magnitude ofthe bias voltage applied by the bias power supply 45 may determine theenergy at which these positive ions strike the workpiece 90. In certainembodiments, the magnitude of the bias voltage may be used to determinethe rate of processing, such as the etch rate. The magnitude of the biasvoltage may also be used to determine the depth of an implantationprocess. In certain embodiments, the bias voltage supplied by the biaspower supply 45 may be a pulsed waveform, such as a square wave. Inthese embodiments, the workpiece 90 may be processed when the biasvoltage is negative, but not processed when the bias voltage is groundor positive. The frequency of the square wave may vary, and may bebetween 0.1 kHz and 2 MHz. Although a square wave may be used, it isunderstood that the duty cycle of the pulsed waveform does not have tobe 50%. Rather, any duty cycle may be used. In certain embodiments, thebias voltage is applied in the form of a pulsed DC waveform. This pulsedDC waveform may have any frequency, such as between 1 kHz and 1 MHz.Further, the duty cycle is not limited by this disclosure.

As shown in FIG. 2, the platen 40 may include a bias electrode 41, inelectrical communication with the bias power supply 45. The bias powersupply 45 supplies a bias voltage to the bias electrode 41. A dielectricmaterial 42, such as a ceramic material, is disposed on top of the biaselectrode 41 to separate the bias electrode 41 from the workpiece 90 andto protect the bias electrode 41 from ion strike. The dielectricmaterial 42 acts as a capacitor, which allows the bias voltage to beapplied to the workpiece 90. A shield ring 50 may be disposed along theouter edge of the workpiece 90. In certain embodiments, the workpiece 90is round, and the shield ring 50 is constructed as an annular ring. Theshield ring 50 may be constructed of a dielectric material, a ceramicmaterial or a semiconductor material, such as for example, siliconcarbide (SiC). Other materials that do not contaminate the workpiece mayalso be used. In some embodiments, the shield ring 50 may be a fewmillimeters in thickness and have a width of several centimeters.Although the shield ring 50 is much thicker than the workpiece, it maybe disposed on the platen 40 such that the top surfaces of the workpiece90 and the shield ring 50 are aligned. In certain embodiments, the topsurface of the shield ring 50 is disposed slightly below the top surfaceof the workpiece 90 to decrease the possibility of contamination.

A ring electrode 51 may be disposed beneath the shield ring 50. In someembodiments, the ring electrode 51 is completely covered by the shieldring 50 so that the ring electrode 51 is not exposed to the plasmachamber 30. In certain embodiments, the ring electrode 51 may be inelectrical communication with the ring bias power supply 55. The ringbias power supply 55 supplies a ring bias voltage to the ring electrode51. An insulating separator 60 may be used to electrically isolate thering electrode 51 from the bias electrode 41. In other embodiments, thering electrode 51 and the bias electrode 41 may be physically separatedfrom one another.

In operation, the antenna 20 is powered using a RF signal from the RFpower supply 27 so as to inductively couple energy into the plasmachamber 30. This inductively coupled energy excites the feed gasintroduced from a gas storage container 70 via gas inlet 71, thusgenerating a plasma. While FIG. 1 shows an antenna 20, other plasmagenerators may also be used with the present disclosure. For example, acapacitively coupled plasma generator may be used.

The plasma within the plasma chamber 30 may be biased at the voltagebeing applied to the chamber walls 32 by the extraction power supply 80.Alternatively, if an extraction power supply 80 is not employed, thechamber walls 32 may be grounded. The workpiece 90, which may bedisposed on a platen 40, is disposed within the plasma chamber 30. Theplaten 40 may be electrically biased by a bias power supply 45. Thedifference in potential between the plasma and the workpiece 90 causescharged positive ions in the plasma to be accelerated toward theworkpiece 90. In other words, positive ions are attracted toward theworkpiece 90 when the voltage applied to the chamber walls 32 is morepositive than the bias voltage applied by the bias power supply 45.Thus, to extract positive ions, the chamber walls 32 may be biased at apositive voltage, while the workpiece 90 is biased at a less positivevoltage, ground or a negative voltage. In other embodiments, the chamberwalls 32 may be grounded, while the workpiece 90 is biased at a negativevoltage.

The bias power supply 45 applies a negative voltage to the biaselectrode 41, which creates a negative voltage on the workpiece 90.Similarly, the ring bias power supply applies a negative voltage to thering electrode 51, which, in turn, creates a negative voltage on theshield ring 50. Positive ions are attracted toward the negatively biasedworkpiece, and are used to perform the desired process, which may be animplantation process, an etching process or a deposition process.

As shown in FIG. 2, the workpiece 90 and the dielectric material 42 maybehave as a first capacitor disposed on top of the bias electrode 41.Similarly, the shield ring 50 may behave as a second capacitor disposedon top of the ring electrode 51. The relative sizes, thicknesses andmaterials may cause these two capacitors to have different values. Forexample, the combination of dielectric material 42 and workpiece 90 maycombine to create a capacitance that is greater than that created by theshield ring 50. Consequently, the resulting voltages that are generatedon the surfaces of the shield ring and the workpiece 90 may not beidentical. These voltages, which may differ from the voltages suppliedby the respective power supplies, are referred to as surface voltages.These unequal surface voltages may result in an uneven plasma sheath atthe boundary between the workpiece 90 and the shield ring 50.

Throughout this disclosure, the term “surface voltage” is used to denotethe voltage generated on the surface of the component, regardless of thefrequency of the bias voltage. In some cases, the surface voltage mayequal the voltage applied to the corresponding electrode. In otherembodiments, the surface voltage may differ from the voltage applied bythe respective power supply due to charging effects.

FIG. 4A shows an example where the difference in capacitance between theworkpiece 90 and the shield ring 50 causes a step in the plasma sheathnear the outer edge of the workpiece 90. In these figures, the biasvoltage may have an operating frequency of about 2 MHz. The outer edgeof the workpiece 90 may be defined as an annular ring having an outerradius equal to the radius of the workpiece and an inner radius that isabout 3-5 mm smaller than the outer radius. The horizontal axisrepresents the distance from the center of the workpiece 90, while thevertical axis represents height. The electrical potential of the plasmasheath is represented by lines of equal electrical potential. In thisexample, the voltage generated on the shield ring 50 may be somewhatdifferent than the voltage generated on the workpiece 90. Because ofthis difference, at a given height, the plasma sheath has greaterelectrical potential in the region above the shield ring 50 than in theregion above the workpiece 90. In other embodiments, the plasma sheathmay have lesser electrical potential in the region above the shield ring50.

Ions typically cross the plasma sheath at a trajectory that isperpendicular to these lines of equal electrical potential. Therefore,as shown in FIG. 4A, the ions 100 tend to strike the outer edge of theworkpiece 90 at an angle which is not normal to the workpiece 90. InFIG. 4A, this effect occurs at radii greater than about 145 mm, wherethe workpiece has a radius of 150 mm. In this disclosure, the angle ofincidence is referenced to the line normal to the plane of the workpiece90. In other words, an ion striking the workpiece 90 perpendicular tothe plane of the workpiece 90 has an incident angle of 0°. An iontravelling parallel to the plane of the workpiece 90 has an incidentangle of 90°. The difference between the surface voltage of the shieldring 50 and the surface voltage of the workpiece 90 may determine theangle of incidence. The greater the difference in the surface voltages,the greater the angle of incidence. Moreover, direction of the ions nearthe outer edge is determined by polarity of this difference. If thesurface voltage of the shield ring 50 is less negative than that of theworkpiece, the ions may be directed toward the outer edge of theworkpiece, increasing ion flux at the edge of the workpiece compared tothe rest of the workpiece 90. In addition, ions near the outer edge willalso arrive at an angle with the skew towards the center of theworkpiece. If the surface voltage of the shield ring 50 is more negativethan that of the workpiece, the ions may be directed toward the shieldring 50.

The non-zero angle of incidence at the outer edge of the workpiece 90may have two effects. First, as noted above, the angle at which ions 100strike the outer edge of the workpiece is different than the rest of theworkpiece 90. Thus, processes that rely on a uniform angle of incidence,such as, for example, directional etching processes, may be adverselyaffected. Second, the angle of incidence near the outer edge of theworkpiece 90 tends to have a focusing effect, causing more ions to beattracted to the outer edge of the workpiece.

The embodiment shown in FIG. 4A may be created when the bias electrode41 and the ring electrode 51 are biased at the same voltage, the biasvoltage is in the RF frequency range, and the resulting surface voltagesare different. As can be seen, ions 100 are directed toward the outeredge of the workpiece 90 at a non-zero angle of incidence. FIG. 4B showsan example where the surface voltage generated at the workpiece 90 andthe shield ring 50 are nearly identical. Consequently, the lines ofequal electrical potential in the plasma sheath are nearly parallel tothe plane of the workpiece 90. Thus, the ions 100 strike the outer edgeof the workpiece 90 at an incident angle substantially equal to 0°. Thismay be achieved by independently controlled the voltages applied by thering bias power supply 55 and the bias power supply 45.

Thus, by manipulating the voltages applied by the bias power supply 45and the ring bias power supply 55 so that the plasma sheath is flat nearthe outer edge of the workpiece 90, the angle of incidence of the ions100 striking the outer edge of the workpiece 90 may be controlled.Throughout this disclosure, the term “flat” as it refers to the plasmasheath shape denotes a plasma sheath shape in which the incident angleof ions striking the workpiece varies by less than 0.5° across theentirety of the workpiece. In other embodiments, the plasma sheath shapemay be manipulated using the apparatus and methods described herein suchthat the deviation in incident angles is less than 0.2° across theentirety of the workpiece.

Returning to FIG. 2, it is noted that, in certain embodiments, thesurfaces that are adjacent to the plasma chamber 30 may benon-conductive materials. Non conductive materials, as that term is usedherein, refer to materials such as ceramics, semiconductors ordielectric materials. Specifically, the shield ring 50 is made of anon-conductive material, such as a silicon carbide material. Of course,other materials that do not contaminate the workpiece 90 may also beused. Likewise, the workpiece 90 is also disposed on a dielectricmaterial 42. These non-conductive materials are selected to minimize theamount of contamination created by the sputtering of the shield ring 50.Specifically, in certain embodiments, the use of a metal shield ring maycause metal particles to be sputtered during an etching process andbecome deposited on the surface of the workpiece 90, thereby affectingthe device being created on that workpiece 90.

Because, in this embodiment, the shield ring 50 is not metal, thevoltages that are supplied by the ring bias power supply 55 may not bethe same as the voltages that are generated on the surface of the shieldring 50. The voltage generated at the surface of the shield ring 50 maybe a function of the output of the ring bias power supply 55, thethickness and height of the shield ring 50, the electric potential ofthe plasma, the dielectric constant of the shield ring 50, and otherfactors. By being able to separately and independently control the ringbias power supply 55, it become possible to match the voltage generatedon the surface of the shield ring 50 to the voltage generated on thesurface of the workpiece 90.

FIG. 2 shows a first embodiment of a platen 40 where the shield ring 50is disposed directly on the ring electrode 51, while the dielectricmaterial 42 is disposed on the bias electrode 41. The dielectricmaterial 42 and the shield ring 50 may be in physical contact or may beseparated. However, other embodiments are also possible.

FIG. 3 shows another embodiment of a platen 40. In this embodiment, likecomponents have been given identical reference designators. In thisembodiment, the dielectric material 142 extends horizontally so as tocover both the ring electrode 51 and the bias electrode 41. The ringelectrode 51 and the bias electrode 41 may be separated by an insulatingseparator 60 or may be physically separated. The workpiece 90 isdisposed on the dielectric material 142 directly above the biaselectrode 41. A shield ring 150 is disposed on top of the dielectricmaterial 142 above the ring electrode 51. Thus, in this embodiment, thevoltage generated on the surface of the shield ring 150 may be afunction of the thickness and dielectric constant of the dielectricmaterial 142, the dimensions and dielectric constant of the shield ring150, the voltage supplied by the ring bias power supply 55, theelectrical potential of the plasma and other factors.

As described above, the ring bias power supply 55 and the bias powersupply 45 may be separately controlled. In certain embodiments, themagnitude of the voltage supplied by the two power supplies may differ.For example, the voltage supplied by the bias power supply 45 may be−1000V, while the voltage supplied by the ring bias power supply 55 maybe different, such as, for example, −900V. In certain embodiments, thephase of the voltage supplied by the ring bias power supply 55 maydiffer from that supplied by the bias power supply 45. For example, ifthe power supplies are used to produce pulsed DC waveforms, the phase ofthe pulsed DC waveform produced by the ring bias power supply 55 may bedifferent from that produced of the bias power supply 45. In otherwords, there may be an offset in time between the two pulsed waveforms.In one embodiment, the pulse may be applied by the ring bias powersupply 55 before the pulse is applied by the bias power supply 45. Inother embodiments, the pulse may be applied by the ring bias powersupply 55 after the pulse is applied by the bias power supply 45.

The above disclosure described the issues associated with non-equalvoltages being generated on the surface of the shield ring 50 and theworkpiece 90. As described above, one mechanism that may be used tomatch the voltage of the shield ring 50 and the workpiece 90 is toindependently control the magnitude and phase of the voltage applied toeach of these components. A second mechanism that may be used to matchthese voltages is to modify the frequency of the bias voltage and thering bias voltage. As described above, many platens use bias voltagesthat have a frequency in the RF range, typically greater than 1 MHz. Bygreatly reducing the frequency of the bias voltage and the ring biasvoltage, the difference between the applied voltage and the surfacevoltage of these components may be greatly reduced. Therefore, incertain embodiments, the bias voltage and the ring bias voltage may be apulsed DC voltage. As described above, this pulsed DC voltage may have afrequency between, for example, 1 kHz and 1 MHz, although otherfrequencies are possible. Further, the duty cycle of this pulsed DCvoltage may be varied and is not limited by this disclosure.

While FIGS. 2-3 show the use of a different power supply to provide thevoltage applied to the ring electrode 51, other embodiments are alsopossible. FIG. 5 shows an embodiment, where the platen 40 is similar inconstruction to FIG. 2. However, in this embodiment, rather than using aseparate power supply to bias the ring electrode 51, a variableimpedance 160 is introduced between the bias electrode 41 and the ringelectrode 51. This variable impedance 160 may be used to tune thesurface voltage generated on the shield ring 50. Thus, while a biaselectrode 41 and ring electrode 51 are both employed, only one powersupply is used. The variable impedance may be capacitive, resistive,inductive or a combination thereof.

Further, in certain embodiments, the difference between the voltagegenerated on the surface of the workpiece 90 and the surface of theshield ring 50 may not be constant around the circumference of theworkpiece 90. For example, the difference between these voltages may beconsistently greater in certain regions than in other regions. Tocompensate for this phenomenon, the ring electrode 51 may be segmentedinto a plurality of arcuate electrodes 251, as shown in FIG. 6. Theunion of all of the arcuate electrodes 251 forms the ring electrode 51.Each of these arcuate electrodes 251 may be in communication with aseparate arcuate bias power supply 255, if desired. If desired, thearcuate electrodes 251 may be separated from one another using aseparator. In other embodiments, the arcuate electrodes 251 may bephysically separated. While eight arcuate electrodes 251 are shown, thenumber of arcuate electrodes 251 that form the ring electrode 51 is notlimited by this disclosure. In this way, the arcuate bias voltageapplied to each arcuate electrode 251 may be separately controlled.Further, while only two arcuate bias power supplies 255 are shown, it isunderstood that each arcuate electrode 251 may be in communication witha respective arcuate bias power supply 255.

While FIG. 6 shows an embodiment employing separate arcuate bias powersupplies 255, other embodiments are possible. Of course, the arcuateelectrodes 251 may also be used with the variable impedance shown inFIG. 5. In this embodiment, a separate variable impedance may bedisposed between the bias electrode 41 and each of the arcuateelectrodes 251.

In certain embodiments, a single shield ring may be disposed on top ofthe plurality of arcuate electrodes 251. In other embodiments, aplurality of arcuate shields is each disposed on a respective arcuateelectrode 251 to form the shield ring.

The above disclosure describes the use of a separate ring electrode sothat the surface voltage of the shield ring matches the surface voltageon the workpiece. This may be beneficial in various situations. First,as described above, the difference in capacitance may lead the workpieceand the shield ring to have different surface voltages. Second, as theworkpiece is processed with ions, the voltage on the surface of theworkpiece may change. Independent control of the ring electrode allowsfor compensation of this charging effect. Third, the shield ring maydegrade after prolonged operation. This degradation may affect itssurface voltage. In other words, even if the surface voltages of theshield ring and the workpiece were originally equal, this degradationmay cause the surface voltage of the shield ring to change over time.Independent control of the ring electrode allows for compensation forthis degradation.

Thus, the above disclosure describes issues that may arise due todifferences in the surface voltage of the shield ring and the workpiece.These issues may be most problematic when the shield ring is constructedof a non-conductive material.

However, as noted above, other issues may result in a plasma sheath thatis not flat over the surface of the workpiece. One such issue is that ofgeometric mismatch. In other words, the height of the top surface of theworkpiece may differ from the height of the top surface of the shieldring. This may be caused by different factors. For example, in oneembodiment, the shield ring may have been initially been installed atthe same height as the workpiece, but repeated processing has changedthe height of the shield ring. If the processing chamber is used for anetching process, the shield ring may be at a lower height due to theetching effects. Conversely, if the processing chamber is used for adeposition process, the shield ring may be at a greater height due tothe deposition effects. This change in the height of the shield ring maycause the shape of the plasma sheath to change in the vicinity of theshield ring.

The issue of geometric mismatch between the shield ring and theworkpiece may apply to all types of shield rings, including those madeof non-conductive and conductive materials.

FIG. 7 shows an embodiment in which the shield ring 350 is conductive.In this embodiment, a separate ring electrode is not needed. Rather, theshield ring 350 combines the functions of the shield ring and the ringelectrode described in the previous embodiments. The shield ring 350 maybe separated from the bias electrode 41 through the use of an insulatingseparator 60. In other embodiments, it may be physically separated fromthe bias electrode 41. Like the previous embodiments, a voltage may beapplied to the shield ring 350 by the ring bias power supply 55. Inother embodiments, a variable impedance may be disposed between the biaspower supply 45 and the shield ring 350, similar to the embodiment shownin FIG. 5.

FIGS. 8A-C shows the effects of geometric mismatch. The horizontal axisrepresents a distance from the center of the workpiece 860. The verticalaxis represents height. Like FIGS. 4A-4B, the plasma sheath 870 is shownabove the workpiece 860. The electrical potential of the plasma sheath870 is represented by lines of equal electrical potential.

In FIG. 8A, a new shield ring 850 is installed in a process chamber. Asdescribed above, the shield ring 850 may be an annular ring thatsurrounds the perimeter of the workpiece 860. The top surface of theshield ring 850 is aligned with the top surface of the workpiece 860.Consequently, the plasma sheath 870 above the workpiece 860 is flat.

In this particular illustration, the platen is used in an etchingprocess. After hours of etching processing, the height of the shieldring 850 has been reduced, relative to the top surface of the workpiece860. Consequently, the plasma sheath 870 in the vicinity of the edge ofthe workpiece 860 is no longer flat. This causes ions to strike theouter edge of the workpiece 860 at an incident angle that is differentthan the incident angle for the rest of the workpiece 860. While FIG. 8Bshows the shield ring 850 being reduced in height due to etching,deposition processes may cause a similar geometric mismatch, albeit inthe opposite direction. In the case of deposition, the height of theshield ring 850 may become greater than that of the top surface of theworkpiece 860.

In FIG. 8C, the configuration of FIG. 8B, where the shield ring 850 isetched to a height lower than the workpiece 860, is again shown.However, in this figure, the voltage applied to the shield ring 850 hasbeen changed to compensate for this geometric mismatch. This change involtage affects the plasma sheath 870, causing it to once again be flatover the surface of the workpiece.

FIGS. 8A-8C illustrate that a difference in height between the shieldring 850 and the workpiece 860 may be problematic. For example, if theshield ring 850 extends upward to a less extent than the workpiece 860,it may affect the shape of the plasma sheath 870. Manipulating thevoltage applied to the shield ring 850 may compensate for this geometricmismatch. In other words, in certain embodiments, it may be advantageousto have different voltages on the surfaces of the workpiece and shieldring, if these components have different heights.

Thus, in one embodiment, the present disclosure describes a method forcontrolling the angle of incidence for ions striking an outer edge ofthe workpiece. This method includes manipulating the voltages generatedon the surface of the workpiece and the surface of the shield ring sothat the plasma sheath above the outer edge of the workpiece is flat. Insome embodiments, this denotes that the deviation in incident anglesacross the entirety of the workpiece is less than 0.5°. In otherembodiments, this denotes that the deviation in incident angles is lessthan 0.2°.

In embodiments where voltage mismatch occurs, manipulating thesevoltages includes applying a voltage to a ring electrode disposedbeneath a shield ring such that the voltage generated on the surface ofthe shield ring matches the voltage generated at the surface of theworkpiece. In certain embodiments, there is a known relationship betweenthe hours of operation and the voltage to be applied to the shield ring.In these embodiments, the voltage applied to the ring electrode may varyin response to this known relationship. This relationship may be in theform of an equation or as a table, which maps hours of operation to aring bias voltage. In other embodiments, means for measuring thevoltages generated at the surfaces of the workpiece and shield ring maybe provided in the plasma chamber. In these embodiments, the voltageapplied to the ring electrode may be controlled based on the actualvoltage measurements. Thus, the voltage applied to the ring electrodemay be controlled via open loop control or closed loop control.

In embodiments where geometric mismatch occurs, the method againincludes manipulating the voltages generated on the surface of theworkpiece and the surface of the shield ring so that the plasma sheathabove the outer edge of the workpiece is flat. In some embodiments, thisdenotes that the deviation in incident angles across the entirety of theworkpiece is less than 0.5°. In other embodiments, this denotes that thedeviation in incident angles is less than 0.2°. FIG. 9 shows a flowchartillustrating a method to correct for geometric mismatches. FIG. 10 showsa system 1000 that may execute this method.

First, as shown in Process 900, the difference between the height of theshield ring 1050 and the workpiece 1090 is measured using a ring heightmeasurement system 1010. In one embodiment, the ring height measurementsystem 1010 may include a laser based measurement system, which measuresthe height of the shield ring 1050 through the use of a laser. Inanother embodiment, the ring height measurement system 1010 may includea timer which computes the total amount of time that the shield ring1050 has been subjected to processing. For example, while workpieces1090 may be processed for short amounts of time, a shield ring mayremain in the processing chamber for hundreds or even thousands ofworkpieces. In this embodiment, the ring height measurement system 1010may determine the height of the shield ring 1050 based on this computedprocessing time. In certain embodiments, a table or equation may be usedto determine ring height based on processing time. In yet anotherembodiment, the ring height measurement system 1010 may be incommunication with a current measuring device 1020, such as a Faradaycup. The ring height measurement system 1010 may compute the totalamount of current that the shield ring 1050 has been exposed to byintegrating the current as measured by the current measuring device 1020over time. This total amount of current can then be correlated to achange in height using a table or an equation.

The ring height measurement system 1010 may be in communication with acontroller 1030. The controller 1030 may include a processing unit, suchas a general purpose computer, dedicated or special purpose computer, oran embedded processor. The controller 1030 also comprises anon-transitory storage element which stores the instructions which areexecuted by the processing unit. These instructions, when executed,enable the controller 1030 to perform the method described herein. Thecontroller 1030 receives the output from the ring height measurementsystem 1010. In certain embodiments, this output may be a valuerepresenting the difference between the height of the shield ring 1050and the workpiece 1090. In other embodiments, this output may simply bedata that the controller 1030 may use to calculate this difference inheight.

Based on this height difference, the controller 1030 may determine anadjustment to the ring bias voltage, as shown in Process 910. In certainembodiments, the controller 1030 may simply use a table or an equationto calculate voltage adjustment based on the height difference. In otherembodiments, the controller 1030 may use input from the currentmeasuring device 1020 to calculate the adjustment to the ring biasvoltage. For example, the magnitude of the adjustment may be a functionof many variables, such as height difference, the mass of the ions inthe plasma, the current being directed toward the platen, and the biasvoltage applied to the bias electrode 1041 by the bias power supply1045. The controller 1030 then determines the adjustment to the ringbias voltage to compensate for the difference in height.

The controller 1030 then applies this new ring bias voltage to theshield ring 1050, as shown in Process 920. In certain embodiments, thecontroller 1030 is in communication with the bias power supply 1045 andthe ring bias power supply 1055. In these embodiments, the controller1030 provides an instruction to the appropriate power supply to adjustits output. After completion of this sequence, the plasma sheath shouldagain be flat across the entirety of the workpiece 1090. This allowsions to strike the workpiece 1090 at the substantially same incidentangle, regardless of any geometric mismatches.

The system of FIG. 10 may also be used with the configuration shown inFIG. 6. For example, in certain embodiments, the height of the shieldring 1050 may not change in a uniform manner around the circumference ofthe workpiece 1090. In this embodiment, the ring height measurementsystem 1010 may determine a height of the shield ring 1050 at aplurality of locations. The controller 1030 may then determine anadjustment in the ring bias voltage to be applied to each of the arcuatepower supplies (see FIG. 6).

Further, FIG. 6 is described as an embodiment where the arcuate biaspower supplies 255 connect to arcuate electrode 251, which are in turnin communication with the shield ring. However, in another embodiment,the shield ring may be conductive. In this embodiment, the arcuateelectrodes 251 are each part of the shield ring. Thus, the configurationof FIG. 7 may also be applied to the embodiment of FIG. 6.

While FIG. 10 shows a shield ring 1050 that is conductive, the abovedescription is equally applicable to the configurations which usenon-conductive shield rings, such as those shown in FIGS. 2-3.

Additionally, while FIG. 1 shows an embodiment in which the platen 40 isdisposed within the plasma chamber 30, other embodiments are alsopossible. For example, the plasma chamber 30 may have an extractionaperture, where the platen is located outside the plasma chamber,proximate the extraction aperture. In this embodiment, the bias voltageapplied to the workpiece causes positive ions within the plasma chamberto be extracted through the extraction aperture toward the workpiece.The methods and apparatus described herein are equally applicable tothis configuration.

The embodiments described above in the present application may have manyother advantages. First, the ability to process the outer edge of theworkpiece in the same manner as the rest of the workpiece is improved.By separately controlling the voltage applied to a ring electrode, theshape of the plasma sheath above the workpiece may be controlled,allowing much improved processing of the outer edge of the workpiece. Inparticular, the incident angle of ions along the outer edge more closelymatches the incident angle of ions striking other portions of theworkpiece. This allows improvements in processes needing a high level ofprecision regarding the incident angle of the ions, such as etchingprocesses. In addition, by improving the matching of the incident angleof ions along the outer edge, the rate of processing along the outeredge more closely matches the rate of processing on the rest of theworkpiece. Furthermore, the use of independent voltages allows forcompensation due to geometric mismatches between the workpiece and theshield ring, and allows for compensation due to shield ring degradation.Thus, the present disclosure describes embodiments which allow for thecreation of a flat plasma sheath in the presence of voltage and/orgeometric mismatches.

The present disclosure is not to be limited in scope by the specificembodiments described herein. Indeed, other various embodiments of andmodifications to the present disclosure, in addition to those describedherein, will be apparent to those of ordinary skill in the art from theforegoing description and accompanying drawings. Thus, such otherembodiments and modifications are intended to fall within the scope ofthe present disclosure. Furthermore, although the present disclosure hasbeen described herein in the context of a particular implementation in aparticular environment for a particular purpose, those of ordinary skillin the art will recognize that its usefulness is not limited thereto andthat the present disclosure may be beneficially implemented in anynumber of environments for any number of purposes. Accordingly, theclaims set forth below should be construed in view of the full breadthand spirit of the present disclosure as described herein.

1. A workpiece processing apparatus, comprising: a plasma generator; aplasma chamber; a platen, the platen comprising: a dielectric materialon which a workpiece is disposed; a bias electrode disposed beneath thedielectric material; a bias power supply to apply a bias voltage to thebias electrode; a shield ring to surround the workpiece; and a ring biaspower supply to apply a ring bias voltage to the shield ring; a ringheight measurement system; and a controller, in communication with thering height measurement system, wherein the controller calculates thering bias voltage to be applied to the shield ring based on input fromthe ring height measurement system.
 2. The workpiece processingapparatus of claim 1, further comprising a current measurement device incommunication with the controller to measure current directed toward theworkpiece, wherein the controller uses input from the currentmeasurement device to calculate the ring bias voltage.
 3. The workpieceprocessing apparatus of claim 1, wherein the controller calculates thering bias voltage based on a difference in height between the workpieceand the shield ring.
 4. The workpiece processing apparatus of claim 1,wherein the shield ring is constructed of metal and the ring bias powersupply is in electrical communication with the shield ring.
 5. Theworkpiece processing apparatus of claim 1, wherein the shield ringcomprises a plurality of arcuate electrodes, which form an annular ring,and wherein the ring bias power supply comprises a plurality of arcuatebias power supplies, each to apply a voltage to a respective one of thearcuate electrodes, and wherein the controller determines the voltage toapply to each of the arcuate electrodes.
 6. The workpiece processingapparatus of claim 1, wherein the ring height measurement systemcomprises a laser.
 7. A platen, comprising: a dielectric material onwhich a workpiece is disposed; a bias electrode disposed beneath thedielectric material; a bias power supply in communication with the biaselectrode; a shield ring, in a shape of an annular ring to surround theworkpiece, the shield ring constructed of a non-conductive material; anda ring electrode disposed beneath the shield ring.
 8. The platen ofclaim 7, comprising a ring power supply in communication with the ringelectrode, where the ring electrode and the bias electrode areindependently controlled.
 9. The platen of claim 8, where the ring powersupply supplies a voltage to the ring electrode so that a surfacevoltage of the shield ring equals a surface voltage of the workpiece.10. The platen of claim 7, comprising a variable impedance disposedbetween the bias electrode and the ring electrode.
 11. The platen ofclaim 7, wherein the shield ring is constructed of silicon carbide. 12.The platen of claim 7, wherein the shield ring is disposed directly onthe ring electrode.
 13. The platen of claim 7, wherein the ringelectrode comprises a plurality of arcuate electrodes, each disposedbeneath the shield ring and together forming an annular ring.
 14. Theplaten of claim 13, comprising a plurality of arcuate power supplies,each arcuate power supply in communication with a respective arcuateelectrode, where the arcuate power supplies are independentlycontrolled.
 15. The platen of claim 14, where the arcuate power supplieseach supply a voltage to the respective arcuate electrode so that asurface voltage of the shield ring equals a surface voltage of theworkpiece. 16.-20. (canceled)
 21. The workpiece processing apparatus ofclaim 3, wherein the controller uses a table or an equation to calculatethe ring bias voltage based on the difference in height.
 22. Theworkpiece processing apparatus of claim 3, wherein the controller alsouses the mass of the ions in the plasma, the current being directedtoward the platen, and the bias voltage applied to the bias electrode bythe bias power supply to determine the ring bias voltage.
 23. Theworkpiece processing apparatus of claim 1, wherein the controllercontrols the phase and magnitude of the ring bias voltage independentlyof the bias voltage.